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Communication

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature

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Roberto Verucchi *†, Lucrezia Aversa †, Marco V. Nardi †, Simone Taioli *‡§

, Silvio a Beccara ‡§, Dario Alfè

, Lucia Nasi

, Francesca Rossi

, Giancarlo Salviati

, and Salvatore Iannotta

^† Istituto dei Materiali per l’Elettronica ed il Magnetismo, IMEM-CNR, Sezione FBK di Trento, 38123 Trento, Italy

^‡ Interdisciplinary Laboratory for Computational Science, FBK-CMM and University of Trento, 38123 Trento, Italy

^§ Department of Physics, University of Trento, 38123 Trento, Italy, and Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, 06123 Perugia, Italy

Dipartimento di Chimica, Università di Bologna, 40126 Bologna, Italy

Department of Earth Sciences, ^#Department of Physics and Astronomy, and London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, U.K.

Istituto dei Materiali per l’Elettronica ed il Magnetismo, IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy

J. Am. Chem. Soc., 2012, 134 (42), pp 17400–17403

DOI: 10.1021/ja307804v

Publication Date (Web): October 11, 2012

roberto.verucchi@cnr.it; taioli@fbk.eu

Author Present Address

Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.

Section:

Crystallography and Liquid Crystals

Abstract

Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C₆₀) supersonic beam. Chemical processes, such as C₆₀ rupture, are activated at a precursor kinetic energy of 30–35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures.

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